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2009 Photo Contest Winners

Congratulations to the 2009 winners!
 Category I: Color Images
1st Place:

.

Deborah Romero
International Rectifier Corporation

An image of an EOS site after decapsulation of a power device. It looks like a smiley face.

2nd Place:


Hamid Kashani
COM DEV International Ltd.

This photo is taken from the flush terminal contact of an
isolator after etching. Due to inadequate degolding, gold-tin
intermetallics were formed during the soldering process.
The joint embrittlement had led to the crack in the solder.
3rd Place: 


Jin Won Koh
National Nanofab Center

Optical microscope view of the solor cell texture which has an efficiency failure.

 Category II: Black and White Images

1st Place:

Kok Peng Yeoh, Zhengkun Ma, Zhiyong Wang
Intel Corporaiton

Revealed petaline metal flakes that caused short between 2 first level interconnect bumps in an assembled flip chip package.

2nd Place: 

Robert Wilkin, Whitney West, Tyler Lenzi
Micron

Gallium Nitride film etched with 8 minutes of 260C
Potassium Hydroxide to determine density for each
of the different types of dislocations present in the film.

 

3rd Place:

Jack Borgeson
Goodrich

Fracture lines in the lower region allowed for identification of the origination point of physical stress to the controller IC. The IC failed hot and the metallization reflowed out of structures leaving the appearance of Native American cliff dwellings such as that of the Hohokam in Arizona.
 Category III: False Color Images

1st Place:

Sumanth Thirunavukkarasu, Jerome Pons
Nanolab Technologies

3D Tomograph of Press Fit Pins in a Printed Circuit Board. Single press fits pins on the side show different levels of fading to show various depths of details.

2nd Place:

Natasha Erdman, Ph.D., N. Kikuchi, R. Campbell
JEOL USA

Passive voltage contrast of metal lines of de-processed
(“finger lapped”) IC. Blue lines are going to ground, orange
lines float. SE Image taken using 0.3 kV, then false-colored.

3rd Place:

Valentin Kulikov

Image shows photoemission center, acquired by Hamamtsu Phemos-1000 microscope, within output diode of CMOS circircuitry. This diode caused pin leakage which resulted into CMOS unit failure. The root cause was found and determined as remaining PolySi at active area border which together with KOI defect led to diode.